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HMC8411LP2FE - Low-Noise Amplifier

Description

The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.

Features

  • Low noise figure: 1.7 dB typical.
  • Single positive supply (self biased).
  • High gain: 15.5 dB typical.
  • High OIP3: 34 dBm typical.
  • 6-lead, 2 mm × 2 mm LFCSP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HMC8411LP2FE Low Noise Amplifier, 0.01 GHz to 10 GHz FEATURES ► Low noise figure: 1.7 dB typical ► Single positive supply (self biased) ► High gain: 15.5 dB typical ► High OIP3: 34 dBm typical ► 6-lead, 2 mm × 2 mm LFCSP APPLICATIONS ► Test instrumentation ► Military communications GENERAL DESCRIPTION The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.
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