Datasheet Summary
Data Sheet
2 GHz to 30 GHz, GaAs pHEMT MMIC Low Noise Amplifier
Features
Output power for 1 dB pression (P1dB): 14.5 dBm typical Saturated output power (PSAT): 17 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third-order intercept (IP3): 26.5 dBm typical Supply voltage: 5 V at 67 mA 50 Ω matched input/output Die size: 2.7 mm × 1.35 mm × 0.05 mm
APPLICATIONS
Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telemunications infrastructure Fiber optics
GENERAL DESCRIPTION
The HMC8400 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit...