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HMC8401 - Low Noise Amplifier

General Description

The HMC8401 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC).

The HMC8401 is a wideband low noise amplifier which operates between dc and 28 GHz.

Key Features

  • Output power for 1 dB compression (P1dB): 16.5 dBm typical Saturated output power (PSAT): 19 dBm typical Gain: 14.5 dB typical Noise figure: 1.5 dB Output third order intercept (IP3): 26 dBm typical Supply voltage: 7.5 V at 60 mA 50 Ω matched input/output Die size: 2.55 mm x 1.62 mm x 0.05 mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet FEATURES Output power for 1 dB compression (P1dB): 16.5 dBm typical Saturated output power (PSAT): 19 dBm typical Gain: 14.5 dB typical Noise figure: 1.5 dB Output third order intercept (IP3): 26 dBm typical Supply voltage: 7.5 V at 60 mA 50 Ω matched input/output Die size: 2.55 mm x 1.62 mm x 0.05 mm APPLICATIONS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telecommunications infrastructure Fiber optics DC to 28 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier HMC8401 GENERAL DESCRIPTION The HMC8401 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8401 is a wideband low noise amplifier which operates between dc and 28 GHz.