HMC8401 Datasheet | Analog Devices

Data Sheet Features Output power for 1 dB pression (P1dB): 16.5 dBm typical Saturated output power (PSAT): 19 dBm typical Gain: 14.5 dB typical Noise figure: 1.5 dB Output third order intercept (IP3): 26 dBm typical Supply voltage: 7.5 V at 60 mA 50 Ω matched input/output Die size: 2.55 mm x 1.62 mm x 0.05 mm APPLICATIONS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telemunications infrastructure Fiber optics DC to 28 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier GENERAL DESCRIPTION The HMC8401 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit...