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HMC8402 - Low Noise Amplifier

General Description

The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz.

Key Features

  • Output power for 1 dB compression (P1dB): 21.5 dBm typical Saturated output power (PSAT): 22 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third order intercept (IP3): 26 dBm typical Supply voltage: 7 V at 68 mA 50 Ω matched input/output Die size: 2.7 mm × 1.363 mm × 0.05 mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet 2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier HMC8402 FEATURES Output power for 1 dB compression (P1dB): 21.5 dBm typical Saturated output power (PSAT): 22 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third order intercept (IP3): 26 dBm typical Supply voltage: 7 V at 68 mA 50 Ω matched input/output Die size: 2.7 mm × 1.363 mm × 0.05 mm APPLICATIONS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.