HMC8402 Datasheet | Analog Devices

Data Sheet 2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier HMC8402 Features Output power for 1 dB pression (P1dB): 21.5 dBm typical Saturated output power (PSAT): 22 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third order intercept (IP3): 26 dBm typical Supply voltage: 7 V at 68 mA 50 Ω matched input/output Die size: 2.7 mm × 1.363 mm × 0.05 mm APPLICATIONS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telemunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit...