HMC8412 - Low-Noise Amplifier

Analog Devices

General Description

The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.

Key Features

Low noise figure: 1.4 dB typical.
Single positive supply (self biased).
High gain: ≤15.5 dB typical.
High OIP3: ≤33 dBm typical.
RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP.

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HMC8412 low-noise amplifier by Analog Devices - Datasheet Preview

Datasheet Details

Part number	HMC8412
Manufacturer	Analog Devices
File Size	1.16 MB
Description	Low-Noise Amplifier
Datasheet	HMC8412 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FEATURES ► Low noise figure: 1.4 dB typical ► Single positive supply (self biased) ► High gain: ≤15.5 dB typical ► High OIP3: ≤33 dBm typical ► RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP APPLICATIONS ► Test instrumentation ► Telecommunications ► Military radar and communication ► Electronic warfare ► Aerospace Data Sheet HMC8412 Low Noise Amplifier, 0.4 GHz to 11 GHz FUNCTIONAL BLOCK DIAGRAM Figure 1. GENERAL DESCRIPTION The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz. The HMC8412 provides a typical gain of 15.5 dB, a 1.