Low VOS (VBE Match): 40 ␮V typ, 100 ␮ V max Low TCVOS: 0.5 ␮V/؇ C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮ V p-p—0.1 H.

using heat sinking to control case temperature. Derate linearity at 16.4 mW/ °C for case temperatures above 40 °C. 4 Rat.

Matched Monolithic Dual Transistor MAT01 PIN CONNECTION TO-78 (H Suffix) The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride “Triple-Passivation” process provides excellent stability of critical parameters over both temperat.

MAT02

MAT03

MAT04

MAT-04

MAT12

MAT14

MA-1022

MA-305

MA-305-500

MA-306

MA-318

MA-318-500

MA-322