AM110P08-11B
AM110P08-11B is P-Channel MOSFET manufactured by Analog Power.
Features
:
- Low r DS(on) trench technology
- Low thermal impedance
- Fast switching speed
Typical Applications:
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits
VDS (V) -80
PRODUCT SUMMARY r DS(on) (mΩ)
11.2 @ VGS = -10V 14.5 @ VGS = -5.5V
ID(A) -110a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -80
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 -110 -390 -110 300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 62.5 1
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM110P08-11B_1A
Analog Power
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain...
