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Analog Power
N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits
AM2312N
VDS (V) 20
PRODUCT SUMMARY rDS(on) (mΩ)
10 @ VGS = 4.5V 13 @ VGS = 2.5V
ID (A) 9.4 8.2
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
VGS
±8
TC=25°C
ID
9.4
IDM
30
IS
1.7
Power Dissipation a
TA=25°C TA=70°C
PD
1.3 0.
AM2312N Datasheet
