The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Analog Power
N-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
AM90N20-78B
VDS (V) 200
PRODUCT SUMMARY rDS(on) (mΩ)
78 @ VGS = 10V 92 @ VGS = 6V
ID(A) 90a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 200
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 90 300 110 300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
TH
AM90N20-78B Datasheet
