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Anpec

APM4550 Datasheet Preview

APM4550 Datasheet

Dual MOSFET

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APM4550J
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
Pin Description
N-Channel
30V/8A,
RDS(ON) = 20m(typ.) @ VGS = 10V
RDS(ON) = 30m(typ.) @ VGS = 4.5V
P-Channel
-30V/-7A,
RDS(ON) = 40m(typ.) @ VGS = -10V
RDS(ON) = 62m(typ.) @ VGS = -4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Top View of DIP 8
D1 D1
S2
G2
G1
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1
N-Channel
D2 D2
P-Channel
Ordering and Marking Information
APM4550
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
J : DIP-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube
Lead Free Code
L : Lead Free Device
APM4550J :
APM4550
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
1
Rev. A.1 - May, 2007
www.anpec.com.tw
http://www.Datasheet4U.com




Anpec

APM4550 Datasheet Preview

APM4550 Datasheet

Dual MOSFET

No Preview Available !

APM4550J
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
VGS=±10V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
PD* Power Dissipation
TA=25°C
TA=100°C
RθJA* Thermal Resistance-Junction to Ambient
Note: *Surface Mounted on 1in2 pad area, t 10sec.
N Channel P Channel
30
-30
±20
±20
8
-7
30
-30
2.5
-2
150
-55 to 150
2.5
1
50
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a
Drain-Source On-State
Resistance
VGS=0V, IDS=250µA
VGS=0V, IDS=-250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=-24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=8A
VGS=-10V, IDS=-7A
VGS=4.5V, IDS=5A
VGS=-4.5V, IDS=-4A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
APM4550J
Unit
Min. Typ. Max.
30
V
-30
1
30
µA
-1
-30
1
1.5
2
V
-1 -1.5 -2
±100
±100 nA
20 27.5
40 50
m
30 40
62 80
Copyright © ANPEC Electronics Corp.
2
Rev. A.1 - May, 2007
www.anpec.com.tw


Part Number APM4550
Description Dual MOSFET
Maker Anpec
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APM4550 Datasheet PDF






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