900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Anpec

APM9948J Datasheet Preview

APM9948J Datasheet

Dual N-Channel MOSFET

No Preview Available !

APM9948J
Dual N-Channel Enhancement Mode MOSFET
Features
60V/4A,
R
DS(ON)
=
60m(typ.)
@
V
GS
=
10V
R
DS(ON)
=
72m(typ.)
@
V
GS
=
4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices are Available
(RoHS Compliant)
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
Top View of DIP8
(8) (7)
D1 D1
(6) (5)
D2 D2
Applications
(2)
(4)
Power Management in DC/DC Converter, DC/AC
G1
G2
Inverter Systems.
Ordering and Marking Information
S1
S2
(1)
(3)
N-Channel MOSFET
APM9948
Assembly Material
Handling Code
Temp. Range
Package Code
Package Code
J : DIP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
APM9948 J :
APM9948
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
1
Rev. A.1 - Mar., 2008
www.anpec.com.tw




Anpec

APM9948J Datasheet Preview

APM9948J Datasheet

Dual N-Channel MOSFET

No Preview Available !

APM9948J
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
PD*
RθJA*
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
VGS=10V
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
TA=25°C
TA=100°C
Rating
60
±20
4
16
2.5
150
-55 to 150
2.5
1
50
Note:
*Surface Mounted on 1in2 pad area, t 10sec.
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Unit
V
A
A
°C
W
°C/W
Symbol
Parameter
Test Condition
APM9948J
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
60
IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=0V
TA=25°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
1
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=4A
VGS=4.5V, IDS=3A
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=2.5A, VGS=0V
ISD=4A, dlSD/dt=100A/µs
V
1
µA
30
1.9 3
V
±10 µA
60 85
m
72 100
0.8 1.1 V
28
ns
28
nC
Copyright © ANPEC Electronics Corp.
2
Rev. A.1 - Mar., 2008
www.anpec.com.tw



Part Number APM9948J
Description Dual N-Channel MOSFET
Maker Anpec
Total Page 3 Pages
PDF Download

APM9948J Datasheet PDF





Similar Datasheet

1 APM9948J Dual N-Channel MOSFET
Anpec
2 APM9948K Dual N-Channel MOSFET
Anpec





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy