ALM-1612 Key Features
- Very Low Noise Figure: 0.95 dB typ
- High Gain: 18.2 dB typ
- High IIP3 and IP1dB
- Exceptional Cell/PCS-Band rejection
- Advanced GaAs E-pHEMT & FBAR Technology
- Low external ponent count
- Shutdown current: < 5 uA
- CMOS patible shutdown pin (SD) current @ 2.7 V
- ESD: For RFin (Pin 3): ESD Human Body Model > 3kV
- Meets MSL3