AT-64023 transistor equivalent, up to 4 ghz linear power silicon bipolar transistor.
* High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz
* High Gain at 1 dB Compression: 12.5 dB Typical G1 dB at 2.0 GHz 9.5 d.
operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced.
The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating ov.
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