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Avago Technologies

MGA-13316 Datasheet Preview

MGA-13316 Datasheet

High Linearity Low Noise Amplifier

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MGA-13316
High Gain, High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-13316 is a two stage, easy-to-
use GaAs MMIC Low Noise Amplifier (LNA). The LNA has
low noise with good input return loss and high linearity
achieved through the use of Avago Technologies’ propri-
etary 0.25 Pm GaAs Enhancement-mode pHEMT process.
Minimum matching needed for input, output and the
inter-stage between the two LNA.
It is designed for optimum use between 2.2 GHz to 4 GHz.
For optimum performance at lower frequency from
400 MHz to 1.5 GHz, MGA-13116 is recommended. For
optimum performance at frequency from 1.5 GHz to
2.5 GHz, the MGA-13216 is recommended. All these 3
products, MGA-13116, MGA-13216 and MGA-13316 share
the same package and pinout configuration.
Pin Configuration and Package Marking
4.0 x 4.0 x 0.85 mm3 16-lead QFN
AVAGO
13316
YYWW
XXXX
Top View
12
11
GND
10
9
Pin 2 Vbias
1 Pin 3 RFin Q1
Pin 10 RFout Q2
2 Pin 11 RFout Q2
3 Pin 13 RFin Q2
Pin 16 RFout Q1
4
All other pins
NC – Not Connected
Bottom View
Note:
Package marking provides orientation and identification
“13316” = Product Code
“YYWW” = Year and Work Week of Manufacture
“XXXX” = Lot Number
Features
x Low noise figure
x High gain
x High linearity performance
x Excellent isolation
x GaAs E-pHEMT Technology [1]
x Low cost small package size: 4.0 x 4.0 x 0.85 mm3
x Excellent uniformity in product specifications
x Meets MSL1, Lead-free and halogen free
Specifications
2.5 GHz; Q1: 5 V, 53 mA (typ) Q2: 5 V, 116 mA (typ)
x 0.76 dB Noise Figure
x 34.3 dB Gain
x 50.3 dB RFout Q1 to RFin Q2 Isolation
x 41.8 dBm Output IP3
x 23.5 dBm Output Power at 1dB gain compression
Applications
x Low noise amplifier for cellular infrastructure including
GSM, CDMA, TD-LTE, and W-CDMA.
x Other very low noise applications.
Simplified Schematic
Vdd1
C9b R4b C10
Vdd2
C5a
R2 C7
R3
C8
L3
C6 R1
C4
C3
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V
ESD Human Body Model = 600 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
L1
RFIN C1
L4
16 15
1
2 Q1 bias
14 13
12
11
3 Q1
4
5
6
Q2
10
9
78
L2
C2 RFOUT
Notes: Enhancement mode technology employs positive gate bias,
thereby eliminating the need of negative gate voltage associated with
conventional depletion mode devices.




Avago Technologies

MGA-13316 Datasheet Preview

MGA-13316 Datasheet

High Linearity Low Noise Amplifier

No Preview Available !

MGA-13316 Absolute Maximum Rating [1] TA = 25° C
Symbol Parameter
Units
Vdd1
Device Voltage
V
Vdd2
Device Voltage
V
Idd1 Q1 Drain Current
mA
Pd
Pin,max
Tj,max
Tstg
Power Dissipation [2]
CW RF Input Power
Junction Temperature
Storage Temperature
W
dBm
°C
°C
Absolute Maximum
5.5
5.5
90
1.19
20
150
-65 to 150
Thermal Resistance
Thermal Resistance [3]
(Vdd1 = 5.0 V, Idd1 = 53 mA, Vdd2 = 5.0 V,
Idd2 = 116 mA), Tjc = 39.59° C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. This is limited by maximum Vd and Id. Board
temperature (Tc) is 25° C. For Tc >103° C,
derate the device power at 25 mW per °C rise
in board temperature adjacent to package
bottom.
3. Thermal resistance measured using Infra-
Red Microscopy Technique.
Electrical Specifications [1]
RF performance at Vdd1 = 5 V, Vdd2 = 5 V, 2.5 GHz, TA = 25° C, measured on the demo board.
Symbol
Parameter and Test Condition
Units Min. Typ. Max.
Idd1 Current at Q1
mA 40 53 68
Idd2 Current at Q2
mA 96
116 138
NF Noise Figure
dB –
0.76 1.1
Gain Gain
dB 33 34.3 36.3
OIP3[2]
Output Third Order Intercept Point
dBm 37
41.8 –
OP1dB
Output Power at 1 dB Gain Compression
dBm 22.1 23.5 –
IRL Input Return Loss, 50 : source
dB –
-19.5
ORL Output Return Loss, 50 : load
dB –
-10.5
|S12|
Reverse Isolation
dB –
50 –
|ISOL1-2|
Isolation between Output pin to Input pin
dB –
50.3 –
Notes:
1. Measurements obtained using demo board described in Figure 7 with component list in Table 1. Input and Output trace loss is not de-embedded
from the measurement.
2. OIP3 test condition: ftone1 = 2500 MHz, ftone2 = 2501 MHz with input power of -27 dBm per tone.
3. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2


Part Number MGA-13316
Description High Linearity Low Noise Amplifier
Maker Avago Technologies
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