AP2302L Key Features
- Support Both DDR I (1.25VTT) and DDR II (0.9VTT) Requirements Source and Sink Current up to 2A High Accuracy Output Volt
- Part: AP2302L
- Manufacturer: BCD Semiconductor
- Size: 159.82 KB
Other AP2302L Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Advanced Power Electronics Corp |
AP2302AGN-HF | N-channel Enhancement-mode Power MOSFET |
|
Advanced Power Electronics Corp |
AP2302AGN-HF-3 | N-channel Enhancement-mode Power MOSFET |
|
Advanced Power Electronics Corp |
AP2302GN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Advanced Power Electronics Corp |
AP2302GN-HF | N-channel Enhancement mode Power MOSFET |
|
Advanced Power Electronics Corp |
AP2302GN-HF-3 | N-channel Enhancement mode Power MOSFET |
AP2302L Description
The AP2302L linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 2A current continuously, providing enough current for most DDR applications. VOUT is designed to track the VREF voltage within a ± 20mV tolerance over the entire current range while preventing shooting through on the output stage.