Datasheet4U Logo Datasheet4U.com

AP2302AGN-HF - N-channel Enhancement-mode Power MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23 package is widely used for all commercial-industrial applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP2302 3A DDR TERMINATION REGULATOR BCD Semiconductor
AP2302L 2A DDR TERMINATION REGULATOR BCD Semiconductor
AP2301 1.5A DDR TERMINATION REGULATOR BCD Semiconductor
AP2301 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH Diodes Incorporated
AP2301 P-Channel MOSFET ALLPOWER

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP2302AGN-HF-3 N-channel Enhancement-mode Power MOSFET
AP2302GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2302GN-HF N-channel Enhancement mode Power MOSFET
AP2302GN-HF-3 N-channel Enhancement mode Power MOSFET
AP2302N N-CHANNEL ENHANCEMENT MODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP2302AGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower Gate Charge ▼ Surface mount package ▼ RoHS Compliant & Halogen-Free SOT-23 D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G 20V 42mΩ 4.6A D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for all commercial-industrial applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 +8 4.6 3.7 20 1.