• Part: AP2301N
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 275.55 KB
Download AP2301N Datasheet PDF
VBsemi
AP2301N
AP2301N is P-Channel MOSFET manufactured by VBsemi.
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Load Switch - PA Switch - DC/DC Converters ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) 5 s Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited. Symbol Rth JA Rth...