BLM3050K Datasheet - BELLING

N-Channel Enhancement Mode Power MOSFET

* VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V Schematic diagram

* High density cell design for ultra low Rdson

* Fully characterized Avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

BLM3050K

BELLING

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N-channel enhancement mode power mosfet.

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BLM3050K N-Channel Enhancement Mode Power MOSFET BELLING

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