Datasheet Details
| Part number | BLM04N08 |
|---|---|
| Manufacturer | BELLING |
| File Size | 1.12 MB |
| Description | 80V N-Channel Power MOSFET |
| Datasheet | BLM04N08-BELLING.pdf |
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Overview: Green Product BLM04N08 80V N-Channel Power MOSFET.
| Part number | BLM04N08 |
|---|---|
| Manufacturer | BELLING |
| File Size | 1.12 MB |
| Description | 80V N-Channel Power MOSFET |
| Datasheet | BLM04N08-BELLING.pdf |
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The BLM04N08 uses advanced trench technology to provide excellent RDS(ON), low gate charge.
It can be used in a wide variety of applications.
Application ●Power switching application ●Hard switched and High frequency circuits ●Uninterruptible power supply KEY CHARACTERISTICS ● VDS = 80V,ID = 200A RDS(ON) < 4mΩ @ VGS=10V ● High density cell design for lower Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation 100% UIS TESTED！ 100% DVDS TESTED！ TO-220 Top View TO-263 Top View Schematic diagram Package Marking And Ordering Information Device Marking Ordering Codes M04N08 BLM04N08-P M04N08 BLM04N08-B Package TO-220 TO-263 Product Code BLM04N08 BLM04N08 Packing Tube Reel Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation(Tc=25℃) PD Single pulse avalanche energy(Note 2) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit 80 ±20 200 800 270 1600 -55 To 175 Unit V V A A W mJ ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case RθJC 0.41 ℃/W Page1 www.belling.com.cn V 1.0 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=80V,VGS=0V Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V On Characteristics Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA Drain-Source On-State Resistance(Note 3) RDS(ON) VGS=10V, ID=50A Forward Transconductance gFS VDS=5V,ID=15A Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss VDS=25V,VGS=0V, f=1.0MHz Switching Characteristics (Note 4) Turn-on De
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