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BLM3401AY - P-Channel Enhancement Mode Power MOSFET

Description

The BLM3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.4A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number BLM3401AY
Manufacturer BELLING
File Size 211.97 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM3401AY Datasheet

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Full PDF Text Transcription

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Pb Free Product BLM3401AY P-Channel Enhancement Mode Power MOSFET Description The BLM3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -4.4A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.
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