BLV830 Datasheet - BELLING

N-Channel Enhancement Mode Power MOSFET

BLV830 General Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Vol.

BLV830 Datasheet (462.24 KB)

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Part number:

BLV830

Manufacturer:

BELLING

File Size:

462.24 KB

Description:

N-channel enhancement mode power mosfet.
BLV830 N-channel Enhancement Mode Power MOSFET Avalanche Energy Specified Fast Switching Simple Drive Requirements BVD.

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BLV830 N-Channel Enhancement Mode Power MOSFET BELLING

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BLV830 General Description

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