BLV297 Datasheet | BELLING

N-channel Enhancement Mode Power MOSFET - Ease of Paralleling - Fast Switching - Simple Drive Requirements BVDSS RDS(ON) ID 200V 2.0Ω 0.65A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit. o Die size with scribe line Scribe line o Die Thickness o Metallization Top Bottom o Bonding Pad Size Gate Source o Passivation 1570µm X 1570µm 80um 300± 20um Al Ti / Ni / Ag 140µm X 102µm 540µm X 540µm Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS VSD Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward On Voltage VGS=0V, ID=250u A VGS=10V, ID=0.65A VDS=VGS, ID=400u A VDS=200V, VGS=0V VGS= 20V VGS=0V, IS=0.65A Min. 200 - Typ. - Max. - 2.0 1.8 0.1 10 1.2 Units V Ω V u A n A V http://.belling..cn -1Total 1 Pages 2/27/2008...