This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
| Part number | BLV6N60 |
|---|---|
| Manufacturer | BELLING |
| File Size | 487.29 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 BLV6N60 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| BLV10 | VHF power transistor | NXP |
| BLV100 | UHF power transistor | NXP |
| BLV103 | UHF power transistor | NXP |
| BLV108 | Vertical N-channel MOSFET | SHANGHAI BELLING |
| BLV11 | VHF power transistor | NXP |
| Part Number | Description |
|---|---|
| BLV640 | N-Channel Enhancement Mode Power MOSFET |
| BLV1N60 | N-Channel Enhancement Mode Power MOSFET |
| BLV1N60A | N-Channel Enhancement Mode Power MOSFET |
| BLV297 | N-Channel Enhancement Mode Power MOSFET |
| BLV40N20 | N-Channel Enhancement Mode Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
