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BLV640 - N-Channel Enhancement Mode Power MOSFET

General Description

This advanced low voltage MOSFET is produced using Belling’s proprietary MOS technology.

Designed for high efficiency switch mode power supply.

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Datasheet Details

Part number BLV640
Manufacturer BELLING
File Size 433.15 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLV640 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLV640 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 200V 0.18Ω 18A Description This advanced low voltage MOSFET is produced using Belling’s proprietary MOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operating Junction Temperature Range Storage Temperature Range Value 200 + 30 18 11 72 125 1.