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BLUE ROCKET ELECTRONICS

BR80N75 Datasheet Preview

BR80N75 Datasheet

N-CHANNEL MOSFET

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BR80N75
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途 / Applications
用于高功率 DC/DC 转换和功率开关。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1G
PIN 2D
PIN 3S
放大及印章代码 / hFE Classifications & Marking
见印章说明。 See Marking Instructions.
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

BR80N75 Datasheet Preview

BR80N75 Datasheet

N-CHANNEL MOSFET

No Preview Available !

BR80N75
Rev.D Nov.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Drain Current
Peak Drain Current
Gate-Source Voltage
Total Power Dissipation
Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
符号
Symbol
VDSS
ID
IS
VGSS
PD(Tc=25)
TJ,TSTG
RθJA
数值
Rating
75
80
80
±25
300
-55 to 150
62.5
单位
Unit
V
A
A
V
W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Forward On Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
符号
Symbol
BVDSS
IDSS
测试条件
Test Conditions
VGS=0V
ID=250μA
VDS=75V VGS=0V
IGSS VGS=±20V VDS=0V
VGS(th) VDS=VGS
ID=250μA
RDS(on) VGS=10V
ID=40A
gFS
VSD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V
VGS=0V
ID=40A
IS=80A
VDS=25V
VGS=0V
f=1MHz
VDD=30.5V ID=40A
RG=25
最小值 典型值 最大值 单位
Min Typ Max Unit
75 V
10 μA
±0.1 μA
2.0 4.0 V
10 12 m
20 S
1.5 V
3700
pF
730 pF
240 pF
25 ns
25 ns
66 ns
30 ns
http://www.fsbrec.com
2/6


Part Number BR80N75
Description N-CHANNEL MOSFET
Maker BLUE ROCKET ELECTRONICS
Total Page 6 Pages
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