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B3965D Datasheet - BiTEK

N- and P-Channel 40-V (D-S) MOSFET

B3965D Features

* 40V/5.2A, RDS(ON)=40mΩ@VGS=10V (N-Ch) 40V/4.9A, RDS(ON)=45mΩ@VGS=4.5V (N-Ch) -40V/-4.5A, RDS(ON)=54mΩ@VGS=-10V (P-Ch) -40V/-3.9A, RDS(ON)=72mΩ@VGS=-4.5V (P-Ch) Super High Density Cell Design For Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current Capability TO-252 Package Applicat

B3965D General Description

The B3965D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application s.

B3965D Datasheet (59.65 KB)

Preview of B3965D PDF

Datasheet Details

Part number:

B3965D

Manufacturer:

BiTEK

File Size:

59.65 KB

Description:

N- and p-channel 40-v (d-s) mosfet.

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B3965D and P-Channel 40-V D-S MOSFET BiTEK

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