2SA1016 PNP Silicon Epitaxial Planar Transistor
High -Voltage Low-Noise Amp applications
The transistor is subdivided into three groups F,
G and H, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICP
Ptot
Tj
TS
Value
120
100
5
50
100
400
125
-55 to +125
Unit
V
V
V
mA
mA
mW
OC
OC
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7/15/2011
