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2SA1016 Datasheet Preview

2SA1016 Datasheet

PNP Silicon Epitaxial Planar Transistor

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2SA1016 PNP Silicon Epitaxial Planar Transistor
High -Voltage Low-Noise Amp applications
The transistor is subdivided into three groups F,
G and H, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICP
Ptot
Tj
TS
Value
120
100
5
50
100
400
125
-55 to +125
Unit
V
V
V
mA
mA
mW
OC
OC
Page 1 of 2
7/15/2011




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2SA1016 Datasheet Preview

2SA1016 Datasheet

PNP Silicon Epitaxial Planar Transistor

No Preview Available !

Characteristics at Tamb=25 OC
Parameter
DC Current Gain
at -VCE=6V, -IC=1mA
Current Gain Group F
G
H
Collector Base Breakdown Voltage
at -IC=10μA
Collector Emitter Breakdown Voltage
at -IC=1mA
Emitter Base Breakdown Voltage
at -IE=10μA
Collector Cutoff Current
at -VCB=80V
Emitter Cutoff Current
at -VEB=4V
Collector Emitter Saturation Voltage
at -IC=10mA, -IB=1mA
Gain Bandwidth Product
at -VCE=6V, -IC=1mA
Output Capacitance
at -VCB=10V, f=1MHz
Noise Level
at VCC=30V, IC=1mA
Rg=56K,VG=77dB/1kHz
Noise Peak Level
at VCC=30V, IC=1mA
Rg=56K,VG=77dB/1kHz
Symbol
hFE
hFE
hFE
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-ICBO
-IEBO
-VCE(sat)
fT
COB
CNO(ave)
CNO(peak)
Min.
160
280
480
120
100
5
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
110
2.2
-
-
Max.
Unit
320 -
560 -
960 -
-V
-V
-V
1 μA
1 μA
0.5 V
- MHz
- pF
35 mV
200 mV
Page 2 of 2
7/15/2011


Part Number 2SA1016
Description PNP Silicon Epitaxial Planar Transistor
Maker Bluecolour
Total Page 2 Pages
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