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Ordering number:EN572D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1016, 1016K/2SC2362, 2362K
High-Voltage Low-Noise Amp Applications
Package Dimensions
unit:mm 2003A
[2SA1016, 1016K/2SC2362, 2362K]
( ) : 2SA1016, 1016K
Specifications
JEDEC : TO-92 EIAJ : SC-43 SANYO : NP
B : Base C : Collecor E : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
2SA1016, 2SC2362
(–)120 (–)100
2SA1016K, 2SC2362K
(–)150 (–)120
(–)5 (–)50 (–)100
400 125 –55 to +125
Unit
V V V mA mA mW ˚C ˚C
Parameter
Symbol
Co
2SA1016 Datasheet
