Semtech Corporation 2SA1015
PNP Transistor
| Part No. | 2SA1015 |
|---|---|
| Datasheet | 2SA1015 Download |
| Manufacturer |  Semtech Corporation |
| Description | PNP Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj Tstg 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Value Unit 50 V 50 V 5 V 150 mA 50 mA 400 mW 150 OC - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group O hFE 70 Y hFE 120 G hFE 200 L hFE 350 at -VCE = 6 V, -IC = 150 mA hFE 25 Collector Base Breakdown Voltage at -IC = 100 µA -V(BR)CBO 50 Collector Emitter Breakdown Voltage at -IC = 10 mA -V(BR)CEO 50 Emitter Base Breakdown Voltage at -IE = 10 µA -V(BR)EBO 5 Collector Base Cutoff Current at -VCB = 50 V -ICBO - Emitter Cutoff Current at -VEB = 5 V -IEBO - Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA -VCE(sat) - Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA -VBE(sat) - Gain Bandwidth Product at -VCE = 10 V, -IC = 1 mA fT 80 Output Capacitance at -VCB = 10 V, f = 1 MHz COB - Max.