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2SA1015 - PNP Transistor

General Description

The 2SA1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature +150°C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400

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Datasheet Details

Part number 2SA1015
Manufacturer TGS
File Size 37.06 KB
Description PNP Transistor
Datasheet download datasheet 2SA1015 Datasheet

Full PDF Text Transcription (Reference)

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TIGER ELECTRONIC CO.,LTD 2SA1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The 2SA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................... -55~+150°C Junction Temperature ..................................................................................... +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 400 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................