q
High collector to emitter voltage VCEO. s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings.
250.
200.
5.
100.
70 750 150.
55 ~ +150 Unit V V V mA mA mW ˚C ˚C
13.5±0.5
0.45.
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Transistor
2SA1018
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC1473
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q
High collector to emitter voltage VCEO.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –250 –200 –5 –100 –70 750 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
13.5±0.5
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.
2SA1018 Datasheet
