Galaxy Century Microelectronics 2SA1015
Silicon Epitaxial Planar Transistor
FEATURES
z Complementary To 2SC1815. z Excellent HFE Linearity. Pb Lead-free z High voltage and high current. z Low noise. z Collector-Emitter voltage BVCEO=-50V.APPLICATIONS
z Low frequency , low noise amplifier. Production specification 2SA1015 SOT-23 ORDERING INFORMATION Type No. Marking 2SA1015 BA Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Dissipation 400 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ C011 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SA1015ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50