Datasheet4U Logo Datasheet4U.com

2SA1011 - POWER TRANSISTOR

General Description

Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) Complement to Type 2SC2344 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-vol

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1011 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SA1011 Silicon PNP transistor BLUE ROCKET ELECTRONICS
2SA101 Ge PNP Drift Transistor ETC
2SA1010 SILICON POWER TRANSISTOR NEC
2SA1010 PNP Transistor INCHANGE

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1015 Silicon PNP Power Transistors
2SA1001 Silicon PNP Power Transistor
2SA1003 Silicon PNP Power Transistor
2SA1007 Silicon PNP Power Transistor
2SA1008 POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Complement to Type 2SC2344 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.