Semtech Corporation 2SA1013
PNP Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
(T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 160 160 6 1 0.5 900 150 -55 to +150 Unit V V V A A mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® Free Datasheet ST 2SA1013 Characteristics at Ta=25 oC DC Current Gain at -VCE=5V, -IC=200mA Current Gain Group R O Y Collector Cutoff Current at -VCB=150V Emitter Cutoff Current at -VEB=6V Collector Emitter Breakdown Voltage at -IC=10mA Collector Emitter Saturation Voltage at -IC=500mA, -IB=50mA Base Emitter On Voltage at -IC=5mA, -VCE=5V Current Gain Bandwidth Product at -VCE=5V, -IC=200mA Output Capacitance at -VCB=10V, f=1MHz Symbol hFE hFE hFE -ICBO -IEBO -BVCEO -VCE(sat) -VBE(on) fT COB Min. 60 100 160 160 0.45 15 - G S P FORM A IS AVAILABLE Typ. 50 - Max. 120...