2SA1012Z
PNP Silicon Epitaxial Planar Transistor
High current switching application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -VCE = 1 V, -IC = 1 A at -VCE = 1 V, -IC = 3 A Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 10 m A Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 3 A, -IB = 150 m A Base Emitter Saturation Voltage at -IC = 3 A, -IB = 150 m A Transition Frequency at -VCE = 4 V, -IC = 1 A Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Turn on Time at -VCC = 30 V, -IB1 = IB2 = 0.15 A, Duty Cycle ≤ 2% Storage Time at -VCC = 30 V, -IB1 = IB2 = 0.15 A, Duty Cycle ≤ 2% Fall Time at...
