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2SA1012Z
PNP Silicon Epitaxial Planar Transistor
High current switching application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -VCE = 1 V, -IC = 1 A at -VCE = 1 V, -IC = 3 A Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 3 A, -IB = 150 mA Base Emitter Saturation Voltage at -IC = 3 A, -IB = 150 mA Transition Frequency at -VCE = 4 V, -IC = 1 A C
2SA1012Z Datasheet
