Download 2SA1012-D Datasheet PDF
Inchange Semiconductor
2SA1012-D
DESCRIPTION - Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A - High Switching Speed - “-D”= TO-252 Package - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 Collector Current-Continuous Total Power Dissipation @ TC=25℃ Junction Temperature -5 ℃ Tstg Storage Temperature Range -55~150 ℃ ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10m A ; IB=...