Datasheet Details
| Part number | 2SA1013 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 166.72 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1013-INCHANGE.pdf |
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Overview: isc Silicon PNP Transistor INCHANGE Semiconductor 2SA1013.
| Part number | 2SA1013 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 166.72 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1013-INCHANGE.pdf |
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·High Voltage and High Current Vceo=-160V(Min.） ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SC2383 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT -160 V -160 V -6 V -1 A -500 mA 900 mW 150 ℃ -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA ;
IB= -50mA ICBO Emitter Cutoff Current VCB= -150V;
Compare 2SA1013 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1013 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1013 | PNP Transistors | Kexin |
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2SA1013 | PNP Silicon Transistor | SEMTECH |
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2SA1013 | PNP Transistor | Secos |
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2SA1013 | PNP Transistor | UTC |
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