Inchange Semiconductor 2SA1013
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1013 |
|---|---|
| Datasheet | 2SA1013 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage and High Current Vceo=-160V(Min.）●Excellent hFE Linearity
●Low Noise
●Complement to Type 2SC2383
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio frequency general purpose amplifierAPPLICATIONS
●Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT -160 V -160 V -6 V -1 A -500 mA 900 mW 150 ℃ -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA ; IB= -50mA ICBO Emitter Cutoff Current VCB= -150V; IE= 0 IEBO Collector Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -200mA ; VCE= -5V● hFE Classifications R O 60-120 100-200 2SA1013 MIN TYP.
