Datasheet Details
| Part number | 2SA1012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 242.73 KB |
| Description | TO-252 PNP Transistor |
| Datasheet | 2SA1012-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1012.
| Part number | 2SA1012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 242.73 KB |
| Description | TO-252 PNP Transistor |
| Datasheet | 2SA1012-INCHANGE.pdf |
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·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1012 | TRANSISITOR | Toshiba Semiconductor |
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2SA1012 | PNP Epitaxial Silicon Transistor | GME |
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2SA1012 | PNP Transistor | SEMTECH |
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2SA1012 | PNP SILICON TRANSISTOR | UTC |
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2SA1012 | PNP Transistor | MCC |
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