Datasheet4U Logo Datasheet4U.com

BM15N10 - 100V N-Channel Enhancement Mode MOSFET

General Description

The 15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology.

The high density process is especially able to minize on-state resistance.These devices are.

📥 Download Datasheet

Datasheet Details

Part number BM15N10
Manufacturer Bookly
File Size 249.42 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet BM15N10 Datasheet

Full PDF Text Transcription for BM15N10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BM15N10. For precise diagrams, and layout, please refer to the original PDF.

100V N-Channel Enhancement Mode MOSFET BM15N10 DESCRIPTION The 15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanc...

View more extracted text
ower effect transitor which is produced using high cell density advanced trench technology. The high density process is especially able to minize on-state resistance.These devices are. especially suited for low voltage application power management DC-DC converters. FEATURE 100V/15 A,RDS(ON)=80.0mΩ (typ.)@VGS=10V 100V/8A, RDS(ON)=115mΩ(typ.)@VGS= 4.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS compliance SOP8 ,SOT23 andTO252 package design 100% UIS Tested 100% Rg tested APPLICATIONS Power Management DC/DC Converter Load Switch PIN CONFIGURATION D G S www