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BM1084 GENERAL DESCRIPTION The BM1084 series of adjustable and fixed voltage regulators are designed to provide 5A output current and to operate dow

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BM2596 (MSP1250G) 150kHz 3A Step-down Voltage Converter General Description The BM2596(=MSP1250G) series of regulators are integrated circuits that pr

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BM2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION BM2341 is the P-Channel logic enhancement mode power field effect transistor which is pro

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BM SEMI NCM0350HV +85V - 2A BUCK DESCRIPTION The NCM0350HV is a monolithic step-down switch mode controller wi th a programmable ou tpu t current l

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BOOKLY MICRO LOW VOLTAGE (1.24V) ADJUSTABLE PRECISION SHUNT REGULATOR General Description Features Data Sheet BM432(BM431L) The BM432(BM431L) are

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www.DataSheet4U.com BM2262 BM2262 BM2262 BM2272 ， ，，BM2262 RF（） IR（）， UHF（） ，。BM2262 12 ， 531441（312） ， 。 、、、/、 。 · CMOS · · 12 6 · （

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24C02 24C04 24C08 24C16 ISBookly Micro 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM JANUARY 20077 FEATURES • Two-Wire Serial Inte

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Bookly MICRO Infrared Receiver Module 1. Features: — Miniature size — Built-in exclusive IC — Wide half angle & long reception distance — Good noise-

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BM9162 450mA Low Dropout Positive Voltage Regulator General Description The BM9162 is a positive low dropout regulator designed for applications req

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100V N-Channel Enhancement Mode MOSFET BM15N10 DESCRIPTION The 15N10 is N channel enhancement mode power effect transitor which is produced using hi

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BOOKLY MICRO BM3407 P-Channel 30V (D-S) 4A P-MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.070@ VGS = –4.5 V –30 0.050@ VGS = –10 V ID (A) –3 –4

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DESCRIPTION BM4953 Dual P Channel Enhancement Mode MOSFET -5.0A BM4953 is the dual P-Channel logic enhancement mode power field effect transistor

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BOOKLY MICRO BM3401 P-Channel 30V (D-S) 4.5A P-MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.070@ VGS = –4.5 V –30 0.050@ VGS = –10 V ID (A) –4

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ABPMM32403606A BOOKLY MICRO N-Channel Enhancement Mode MOSFET Features Pin Description • +30V / 4A , N-MOSFET RDS(ON)=30mΩ(typ.) @ VGS=10V RDS(ON

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N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.085 @ VGS = 4.5 V 20 0.115 @ VGS = 2.5 V ID (A) 2.8 2.4 TO-236 (SOT-23) G1

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BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced

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P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.130 @ VGS = –4.5 V –20 0.190 @ VGS = –2.5 V ID (A) –2.3 –1.9 TO-236 (SOT-23

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BM0950HV Step-up boost Converter DESCRIPTION BM0950HVBOOST DCDC， 70HZ ， ， BM0950HV+3V ~ +18V BM0950HV+5V ~ +80V （100V BM，MOS） 2mA MOS， ，。 12V up to

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BM0750HV DC-DC ： ： BM0750 ， 。 、、 。 BM0750  ：12V 120V  0.8V30V  130mΩ   200K          1 BM0750HV (1) VIN ..

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