Full PDF Text Transcription for BM3407 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BM3407. For precise diagrams, and layout, please refer to the original PDF.
BOOKLY MICRO BM3407 P-Channel 30V (D-S) 4A P-MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.070@ VGS = –4.5 V –30 0.050@ VGS = –10 V ID (A) –3 –4.1 T (SOT-23) G1 S2 3D Top ...
View more extracted text
–4.5 V –30 0.050@ VGS = –10 V ID (A) –3 –4.1 T (SOT-23) G1 S2 3D Top View Si2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C VDS VGS ID IDM IS PD TJ, Tstg –30 "20 –4 –2.5 –12 –1.25 1.25 0.8 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface mounted on