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BU426, BU426A NPN SILICON POWER TRANSISTORS
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Rugged Triple-Diffused Planar Construction 900 Volt Blocking Capability
B
SOT-93 PACKAGE (TOP VIEW) 1
C
2
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 50°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
BU426 Datasheet
