Datasheet4U Logo Datasheet4U.com

BH616UV4010 - Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit

Description

The BH616UV4010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage.

Features

  • Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. ) at 55ns 2mA (Max. ) at 1MHz Standby current : 2.0uA (Typ. ) at 25OC VCC = 1.2V Data retention current : 1.0uA at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully sta.

📥 Download Datasheet

Datasheet preview – BH616UV4010

Datasheet Details

Part number BH616UV4010
Manufacturer Brilliance Semiconductor
File Size 185.29 KB
Description Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit
Datasheet download datasheet BH616UV4010 Datasheet
Additional preview pages of the BH616UV4010 datasheet.

📁 Similar Datasheet

Other Datasheets by Brilliance Semiconductor

Full PDF Text Transcription

Click to expand full text
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit Green package materials are compliant to RoHS BH616UV4010 www.DataSheet4U.com n FEATURES Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 2.0uA (Typ.) at 25OC VCC = 1.2V Data retention current : 1.0uA at 25OC Ÿ High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data retention supply voltage as low as 1.
Published: |