BH616UV1610 - Ultra Low Power/High Speed CMOS SRAM

Product Overview

Brilliance Semiconductor

Datasheet Details

Part number	BH616UV1610
Manufacturer	Brilliance Semiconductor
File Size	179.26 KB
Description	Ultra Low Power/High Speed CMOS SRAM
Datasheet	BH616UV1610 Datasheet
Additional preview pages of the BH616UV1610 datasheet.

Product details

Description

The BH616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage.

Features

Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. )at 55ns 2mA (Max. ) at 1MHz Standby current : 5.0uA (Typ. ) at 3.0V/25OC VCC = 1.2V Data retention current : 2.5uA(Typ. ) at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=1.65~3.6V -70 70ns (Max. ) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three s.

📁 Similar Datasheet

BH6111FV - Power-unit (Rohm)
BH6113FV - Power-unit (Rohm)
BH6114FV - Power-unit (Rohm)
BH6150F - System reset (Rohm)
BH6172GU - System Regulator (Rohm)
BH6173GUL - Silicon Monolithic Integrated Circuit (Rohm)
BH6176GU - Silicon Monolithic Integrated Circuit (Rohm)
BH6038KN - Power Management (Rohm)

Other Datasheets by Brilliance Semiconductor

BH616UV1611 - Ultra Low Power/High Speed CMOS SRAM
BH616UV4010 - Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit
BH616UV8010 - Ultra Low Power/High Speed CMOS SRAM
BH616UV8011 - Ultra Low Power/High Speed CMOS SRAM
BH62UV1600 - Ultra Low Power/High Speed CMOS SRAM
BH62UV4000 - Ultra Low Power/High Speed CMOS SRAM

Published: May 3, 2010 |