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BH616UV4010 - Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit

General Description

The BH616UV4010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage.

Key Features

  • Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. ) at 55ns 2mA (Max. ) at 1MHz Standby current : 2.0uA (Typ. ) at 25OC VCC = 1.2V Data retention current : 1.0uA at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully sta.

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Datasheet Details

Part number BH616UV4010
Manufacturer Brilliance Semiconductor
File Size 185.29 KB
Description Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit
Datasheet download datasheet BH616UV4010 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit Green package materials are compliant to RoHS BH616UV4010 www.DataSheet4U.com n FEATURES Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 2.0uA (Typ.) at 25OC VCC = 1.2V Data retention current : 1.0uA at 25OC Ÿ High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data retention supply voltage as low as 1.