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BH62UV8000 - Ultra Low Power/High Speed CMOS SRAM

General Description

BH62UV8000 Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.0V Operation current : 5.0mA at 70ns at 25OC 1.5mA at 1MHz at 25OC Standby current : 2.5uA at 25OC VCC = 2.0V Data retention current : 2.5uA at 25OC Ÿ High speed access time : -70 70ns at 1.8V at 85O

Key Features

  • Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit n.

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Datasheet Details

Part number BH62UV8000
Manufacturer Brilliance Semiconductor
File Size 324.36 KB
Description Ultra Low Power/High Speed CMOS SRAM
Datasheet download datasheet BH62UV8000 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com BSI n FEATURES Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit n DESCRIPTION BH62UV8000 Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.0V Operation current : 5.0mA at 70ns at 25OC 1.5mA at 1MHz at 25OC Standby current : 2.5uA at 25OC VCC = 2.0V Data retention current : 2.5uA at 25OC Ÿ High speed access time : -70 70ns at 1.8V at 85OC Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refreash Ÿ Data retention supply voltage as low as 1.0V The BH62UV8000 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 8 bits and operates in a wide range of 1.65V to 3.