BS62LV1027 Datasheet Text
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BSI
- Features
Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1027
- Wide Vcc operation voltage : 2.4V ~ 5.5V
- Very low power consumption : Vcc = 3.0V C-grade : 17mA (@55ns) operating current I- grade : 18mA (@55ns) operating current C-grade : 14mA (@70ns) operating current I- grade : 15mA (@70ns) operating current 0.1uA (Typ.) CMOS standby current Vcc = 5.0V C-grade : 46mA (55ns) operating current I- grade : 47mA (55ns) operating current C-grade : 38mA (70ns) operating current I- grade : 39mA (70ns) operating current 0.6uA (Typ.) CMOS standby current
- High speed access time : -55 55ns -70 70ns
- Automatic power down when chip is deselected
- Easy expansion with CE2, CE1, and OE options
- Three state outputs and TTL patible
- Fully static operation
- Data retention supply voltage as low as 1.5V
- DESCRIPTION
The BS62LV1027 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power Features with a typical CMOS standby current of 0.1uA at 3V/25oC and maximum access time of 55ns at 3V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV1027 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV1027 is available in DICE form , JEDEC standard 32 pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP,8mm x13.4 mm STSOP and 8mmx20mm TSOP. SPEED (ns) POWER DISSIPATION Operating STANDBY
(ICCSB1 , Max) (ICC, Max)
- PRODUCT FAMILY
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