BS62LV1029

Manufacturer: Brilliance Semiconductor

BS62LV1029 datasheet by Brilliance Semiconductor.

BS62LV1029 Datasheet Details

Part number	BS62LV1029
Datasheet	BS62LV1029-BrillianceSemiconductor.pdf
File Size	421.32 KB
Manufacturer	Brilliance Semiconductor
Description	Very Low Power/Voltage CMOS SRAM

BS62LV1029 Overview

The BS62LV1029 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power.

BS62LV1029 Key Features

Vcc operation voltage : 4.5V ~ 5.5V
Very low power consumption
High speed access time : -55 55ns -70 70ns
Automatic power down when chip is deselected
Three state outputs and TTL patible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE2, CE1, and OE options
DESCRIPTION

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BS62LV1023	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1024	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1025	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1027	Very Low Power/Voltage CMOS SRAM
BS62LV2000	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2001	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2003	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2007	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV256	Very Low Power/Voltage CMOS SRAM 32K X 8 bit

BS62LV1029 Datasheet Details

BS62LV1029 Overview

BS62LV1029 Key Features

More Datasheets from Brilliance Semiconductor

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