BS62LV2001- Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2003- Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005- Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2007- Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV256- Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2563- Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565- Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV1023- Very Low Power/Voltage CMOS SRAM 128K X 8 bit
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BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
DESCRIPTION
BS62LV2000
• Wide Vcc operation voltage : 2.7V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.15uA (Typ.) CMOS standby current Vcc = 5.0V C-grade : 40mA (Max.) operating current I- grade : 45mA (Max.) operating current 3uA (Typ.) CMOS standby current • High speed access time : -70 70ns(Max.) at Vcc = 3.0V -10 100ns(Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.