1SS355 Datasheet SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE

Manufacturer: Bruckewell

1SS355 silicon epitaxial high speed switching diode by Bruckewell - Datasheet Preview

Datasheet Details

Part number	1SS355
Manufacturer	Bruckewell
File Size	371.97 KB
Description	SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE
Datasheet	1SS355 Datasheet

General Description

• Silicon planar zener diode in a small plastic SMD SOD-323 package Packing & Order Information 3,000/Reel Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol Value Maximum Peak Reverse Voltage VRRM 90 Maximum DC Reverse Voltage VRM 80 Maximum Average Forward Current IF 100 Maximum Peak Forward Voltage IFM 255 Maximum Surge Current (1s) IFSM 500 Maximum Junction Temperature TJ 125 Storage temperature range TS -55 to +175 Unit V V mA mA mA °C °C Publication Order Number: [1SS355] © Bruckewell Technology Corporation Rev.

A -201

Overview

1SS355 SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE.

Key Features

Smal plastic package suitable for surface mounted design.
High Speed (Trr = 1.2 ns Typ. ).
High reliability with high surge current handling capability.
RoHS compliant package.

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